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Description
DIODES INC. - DMG6602SVT - Dual MOSFET, Complementary N and P Channel, 30 V, 3.4 A, 0.038 ohm, TSOT-26, Surface Mount
- Transistor Polarity: N and P Channel
- Continuous Drain Current Id: 3.4A
- Drain Source Voltage Vds: 30V
- On Resistance Rds(on): 0.038ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 1V
- Power Dissipation Pd: 1.12W
- Transistor Case Style: TSOT-26
- No. of Pins: 6Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: -
- SVHC: No SVHC (15-Jan-2019)
- Continuous Drain Current Id, N Channel: 3.4A
- Continuous Drain Current Id, P Channel: -2.8A
- Drain Source Voltage Vds, N Channel: 30V
- Drain Source Voltage Vds, P Channel: -30V
- Module Configuration: Dual
- On Resistance Rds(on), N Channel: 0.038ohm
- On Resistance Rds(on), P Channel: 0.073ohm
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +150°C
