Description
VISHAY - SI2308CDS-T1-GE3 - Power MOSFET, N Channel, 60 V, 2.6 A, 0.12 ohm, SOT-23, Surface Mount
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 2.6A
- Drain Source Voltage Vds: 60V
- On Resistance Rds(on): 0.12ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 3V
- Power Dissipation Pd: 1.6W
- Transistor Case Style: SOT-23
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: TrenchFET Gen IV Series
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)