Omschrijving
MICROCHIP - 2N6661 - Power MOSFET, Vertical DMOS FET, N Channel, 90 V, 1.5 A, 4 ohm, TO-39, Through Hole
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 1.5A
- Drain Source Voltage Vds: 90V
- On Resistance Rds(on): 4ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 2V
- Power Dissipation Pd: 6.25W
- Transistor Case Style: TO-39
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
