Documenten en downloads
Omschrijving
ONSEMI - BC856BDW1T1G - Bipolar Transistor Array, General Purpose, PNP, 65 V, 100 mA, 380 mW, 290 hFE, SOT-363
- Transistor Polarity: PNP
- Collector Emitter Voltage V(br)ceo: 65V
- Power Dissipation Pd: 380mW
- DC Collector Current: 100mA
- DC Current Gain hFE: 290hFE
- Transistor Case Style: SOT-363
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: AEC-Q101
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- Operating Temperature Min: -55°C
- Transition Frequency ft: 100MHz
