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ONSEMI - MMBT5551M3T5G - Bipolar (BJT) Single Transistor, NPN, 160 V, 60 mA, 265 mW, SOT-723, Surface Mount
- Transistor Polarity: NPN
- Collector Emitter Voltage V(br)ceo: 160V
- Transition Frequency ft: -
- Power Dissipation Pd: 265mW
- DC Collector Current: 60mA
- DC Current Gain hFE: 30hFE
- Transistor Case Style: SOT-723
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: AEC-Q101
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
